Silicon Carbide and Related Materials 2005
| Paper Title | Page |
|---|---|
|
Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC Authors: Peter Wellmann, Desirée Queren, Ralf Müller, Sakwe Aloysius Sakwe, Ulrike Künecke |
79 |
|
High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design Authors: Kap Ryeol Ku, Jung Kyu Kim, Jung Doo Seo, Ju Young Lee, Myung Ok Kyun, Won Jae Lee, Geun Hyoung Lee, Il Soo Kim, Byoung Chul Shin |
83 |
|
Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth Authors: Krzysztof Grasza, Emil Tymicki, Jaroslaw Kisielewski |
87 |
|
The Influence of SiC Powder Source on 6H-SiC Single Crystals Grown by the Sublimation Method Authors: Jae Woo Kim, Soo Hyung Seo, Kwan Mo Kim, Joon Suk Song, Tae Sung Kim, Myung Hwan Oh |
91 |
|
Polytype Control in 6H-SiC Grown via Sublimation Method Authors: Xian Xiang Li, Shou Zhen Jiang, Xiao Bo Hu, Jie Dong, Juan Li, Xiu Fang Chen, Li Wang, Xian Gang Xua, Min Hua Jiang |
95 |
|
Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method Authors: Laurence Latu-Romain, Didier Chaussende, Carole Balloud, Sandrine Juillaguet, L. Rapenne, Etienne Pernot, Jean Camassel, Michel Pons, Roland Madar |
99 |
|
Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals Authors: Mark A. Fanton, Qiang Li, A.Y. Polyakov, R.L. Cavalero, R.G Ray, B.E. Weiland, Marek Skowronski |
103 |
|
SiC HTCVD Simulation Modified by Sublimation Etching Authors: Yasuo Kito, Emi Makino, Kei Ikeda, Masao Nagakubo, Shoichi Onda |
107 |
|
Gas Fed Top-Seeded Solution Growth of Silicon Carbide Authors: Didier Chaussende, Michel Pons, Roland Madar |
111 |
|
Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution Authors: Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara, Kazuo Nakajima |
115 |
