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Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

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• p191 Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition   [ 382 K ]
  Authors: Guo Sheng Sun, Jin Ning, Quan Cheng Gong, Xin Gao, Lei Wang, Xing Fang Liu, Yi Ping Zeng, Jin Min Li
• p195 Highly Uniform SiC Epitaxy for MESFET Fabrication   [ 243 K ]
  Authors: Jie Zhang, Janice Mazzola, Carl Hoff, C. Rivas, Esteban Romano, Janna B. Casady, Michael S. Mazzola, Jeff B. Casady, Kevin Matocha
• p199 Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization   [ 151 K ]
  Authors: Francesco La Via, G. Galvagno, A. Firrincieli, Fabrizio Roccaforte, Salvatore Di Franco, Alfonso Ruggiero, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, F. Portuese, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa
• p203 High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH₃SiH₃ and C₃H₈ Sources   [ 181 K ]
  Authors: Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki
• p207 Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates   [ 8 M ]
  Authors: Wook Bahng, Hui Jong Cheong, In Ho Kang, Sang Cheol Kim, Ki Hyun Kim, Nam Kyun Kim
• p211 Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena   [ 147 K ]
  Authors: Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Kazuo Arai, K. Kimura, K. Nakamura, Sadafumi Yoshida
• p215 Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property   [ 178 K ]
  Authors: Ho Keun Song, Jeong Hyun Moon, Jeong Hyuk Yim, Hyeong Joon Kim
• p219 Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD   [ 2 M ]
  Authors: Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami
• p223 Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition   [ 425 K ]
  Authors: Hiroaki Saitoh, Akira Manabe, Tsunenobu Kimoto
• p227 Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC   [ 875 K ]
  Authors: Mikael Syväjärvi, Rositza Yakimova, Gholam Reza Yazdi, Arul Arjunan, Eugene Toupitsyn, Tangali S. Sudarshan
• p231 Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy   [ 2 M ]
  Authors: Hidekazu Tsuchida, Isaho Kamata, Toshiyuki Miyanagi, Tomonori Nakamura, Koji Nakayama, R. Ishii, Yoshitaka Sugawara
• p235 Ab Initio Studies of the Surface Reaction of Si₂C and SiC₂ with Si on the 4H-SiC (000-1) Surface   [ 242 K ]
  Authors: Hiroki Yamaguchi, Yukinori Sakiyama, Emi Makino, Shoichi Onda, Yoichiro Matsumoto
• p239 Thick Epitaxial Layers on 4º Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kV   [ 1 M ]
  Authors: Christian Hecht, Bernd Thomas, Wolfgang Bartsch
• p243 Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers   [ 4 M ]
  Authors: Ze Hong Zhang, Tangali S. Sudarshan
• p247 Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers   [ 1 M ]
  Authors: Andrew J. Trunek, Philip G. Neudeck, David J. Spry