Paper Title
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Authors: Masato Noborio, Yuki Negoro, Jun Suda, Tsunenobu Kimoto
Abstract:SiC lateral MOSFETs with multi-RESURF structures have been fabricated by a self-aligned process. The “multi-RESURF” means “double RESURF”...
1305
Authors: Ryouji Kosugi, Kenji Suzuki, Kazuto Takao, Yusuke Hayashi, Tsutomu Yatsuo, Kenji Fukuda, Hiromichi Ohashi, Kazuo Arai
Abstract:A passivation annealing in nitric oxide (NO) ambient significantly reduces the interfacial defects of the SiO2/4H-SiC interface and improves...
1309
Authors: Sumi Krishnaswami, Sei Hyung Ryu, Bradley Heath, Anant K. Agarwal, John W. Palmour, Bruce Geil, Aivars J. Lelis, Charles Scozzie
Abstract:Gate oxide reliability measurements of 4H-SiC DMOSFETs were performed using the Time Dependent Dielectric Breakdown (TDDB) technique at...
1313
Authors: Aivars J. Lelis, Daniel B. Habersat, G. Lopez, J.M. McGarrity, F. Barry McLean, Neil Goldsman
Abstract:We have observed instability in the threshold voltage, VT, of SiC metal-oxide semiconductor field-effect transistors (MOSFETs) due to...
1317
Authors: Siddharth Potbhare, Gary Pennington, Neil Goldsman, Aivars J. Lelis, Daniel B. Habersat, F. Barry McLean, J.M. McGarrity
Abstract:A physics based device simulator for detailed numerical analysis of 4H-SiC MOSFETs with an advanced mobility model that accounts for the...
1321
Authors: Alton B. Horsfall, C.H.A. Prentice, Peter Tappin, Praneet Bhatnagar, Nicolas G. Wright, Konstantin Vassilevski, Irina P. Nikitina
Abstract:Although Silicon Carbide has become the material of choice for high power applications in a range of extreme environments, the interest in...
1325
Authors: Mrinal K. Das, Joseph J. Sumakeris, Brett A. Hull, Jim Richmond
Abstract:The PiN diode is an attractive device to exploit the high power material advantages of 4H-SiC. The combination of high critical field and...
1329
Authors: Philip G. Neudeck, David J. Spry, Andrew J. Trunek
Abstract:This paper reports on initial fabrication and electrical characterization of 3C-SiC p+n junction diodes grown on step-free 4H-SiC mesas....
1335
Authors: Michael E. Levinshtein, Pavel A. Ivanov, Mykola S. Boltovets, Valentyn A. Krivutsa, John W. Palmour, Mrinal K. Das, Brett A. Hull
Abstract:Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have been investigated in the temperature range Т = 300 –...
1339
Authors: Anatoly M. Strel'chuk, A.V. Mashichev, Alexander A. Lebedev, A.N. Volkova, Konstantinos Zekentes
Abstract:The forward current was investigated in 4H-SiC p+n structures grown by sublimation epitaxy. The doping level, Nd-Na, of the n-layer was...
1343
Showing 311 to 320 of 379 Paper Titles