Paper Title
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Authors: J. Bai, X. Huang, Balaji Raghothamachar, Michael Dudley, B. Wagner, Robert F. Davis, L. Wu, Y. Zhu
Abstract:Strain relaxation in the GaN/AlN/6H-SiC epitaxial system grown by vicinal surface epitaxy (VSE) is investigated and compared with that in...
1513
Authors: H.C. Lin, Zhe Chuan Feng, Ming Song Chen, Z.X. Shen, Wei Jie Lu, W.E. Collins
Abstract:The phonon anisotropy property of the GaN wurtzite crystal is studied using angular dependent Raman spectroscopy both theoretically and...
1517
Authors: Balaji Raghothamachar, Rafael Dalmau, Michael Dudley, Raoul Schlesser, Dejin Zhuang, Ziad Herro, Zlatko Sitar
Abstract:Using a combination of synchrotron white beam x-ray topography (SWBXT) and high resolution x-ray diffraction (HRXRD), the structural quality...
1521
Authors: W. Huang, T. Khan, T. Paul Chow
Abstract:Both n-type and p-type GaN MOS capacitors with plasma-enhanced CVD-SiO2 as the gate oxide were characterized using both capacitance and...
1525
Authors: S. Chevtchenko, Q. Fan, Cole W. Litton, A.A. Baski, Hadis Morkoç
Abstract:It is generally accepted that the Schottky barrier height (SBH) is affected by the initial band bending at the bare nGaN surface as well as...
1529
Authors: N. Biyikli, Cole W. Litton, J. Xie, Y.T. Moon, F. Yun, C.G. Stefanita, S. Bandyopadhyay, J.R. Meyer, Hadis Morkoç
Abstract:Carrier transport properties of AlGaN/GaN heterostructures have been analyzed with the quantitative mobility spectrum analysis (QMSA)...
1533
Authors: Alexander A. Lebedev, O. Yu. Ledyaev, Anatoly M. Strel'chuk, Alexey N. Kuznetsov, A.E. Cherenkov, A.E. Nikolaev, A.S. Zubrilov, Natasha V. Seredova, A.A. Volkova
Abstract:The investigated AlGaN epitaxial layers were grown by hydride vapor phase epitaxy (HVPE) on a commercial P+ SiC substrate or on an N+ SiC...
1537
Authors: X.A. Cao, M. Larsen, H. Lu, Steve Arthur
Abstract:GaN PiN diodes with a 4 μm Si-doped n--GaN drift layer (n~7×1016 cm-3) were grown on free-standing GaN using metalorganic chemical vapor...
1541
Authors: Jun Suda, Yuki Nakano, Syouta Shimada, Koichi Amari, Tsunenobu Kimoto
Abstract:Characterization of n+-GaN/p−-SiC and n+-GaN/p+-SiC heterojunctions as well as fabrication of GaN/SiC heterojunction bipolar transistors...
1545
Authors: Sang Kwon Lee, Han Kyu Seong, Ki Chul Choi, Nam Kyu Cho, Heon Jin Choi, Eun Kyung Suh, Kee Suk Nahm
Abstract:We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet...
1549
Showing 361 to 370 of 379 Paper Titles