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Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

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• p251 SiC Migration Enhanced Embedded Epitaxial (ME³) Growth Technology   [ 261 K ]
  Authors: Yuuichi Takeuchi, Mitsuhiro Kataoka, Tsunenobu Kimoto, Hiroyuki Matsunami, Rajesh Kumar Malhan
• p255 CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates   [ 1 M ]
  Authors: Y. Shishkin, Yue Ke, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke, Stephen E. Saddow
• p259 Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask   [ 661 K ]
  Authors: Can Hua Li, I. Bhat, T. Paul Chow
• p263 6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method   [ 204 K ]
  Authors: Y. Kawai, Tomohiko Maeda, Yoshihiro Nakamura, Yoji Sakurai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Masahiro Yoshimoto, Tomoaki Furusho, Hiroyuki Kinoshita, Hiromu Shiomi
• p267 Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace   [ 310 K ]
  Authors: Chi Kwon Park, Joon Ho An, Won Jae Lee, Byoung Chul Shin, Shigehiro Nishino
• p271 Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxial Growth on on-axis α-SiC (0001) at Low Temperature   [ 975 K ]
  Authors: Maher Soueidan, Gabriel Ferro, François Cauwet, L. Mollet, Christophe Jacquier, Ghassan Younes, Yves Monteil
• p275 Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts   [ 521 K ]
  Authors: Gabriel Ferro, Maher Soueidan, Christophe Jacquier, Phillippe Godignon, Thomas Stauden, Jörg Pezoldt, Mihai Lazar, Josep Montserrat, Yves Monteil
• p279 Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas   [ 2 M ]
  Authors: H. Du, Marek Skowronski, Philip G. Neudeck, Andrew J. Trunek, David J. Spry, J. Anthony Powell
• p283 Structure Evolution of 3C-SiC on Cubic and Hexagonal Substrates   [ 838 K ]
  Authors: Rositza Yakimova, Gholam Reza Yazdi, Nut Sritirawisarn, Mikael Syväjärvi
• p287 Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism   [ 2 M ]
  Authors: Maher Soueidan, Gabriel Ferro, J. Stoemenos, Efstathios K. Polychroniadis, Didier Chaussende, F. Soares, Sandrine Juillaguet, Jean Camassel, Yves Monteil
• p291 ‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC   [ 1 M ]
  Authors: Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Hiroyuki Nagasawa
• p295 Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification   [ 538 K ]
  Authors: Jörg Pezoldt, Francisco M. Morales, Thomas Stauden, Christian Förster, Efstathios K. Polychroniadis, J. Stoemenos, D. Panknin, Wolfgang Skorupa
• p299 Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD   [ 299 K ]
  Authors: Hideki Shimizu, Yosuke Aoyama
• p303 Selective Epitaxial Growth of 3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD Reactor   [ 2 M ]
  Authors: Aparna Gupta, Chacko Jacob
• p307 Growth of 3C-SiC on Si Molds for MEMS Applications   [ 3 M ]
  Authors: M. Reyes, M. Waits, S. Harvey, Y. Shishkin, Bruce Geil, J.T. Wolan, Stephen E. Saddow