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Authors: Kazuhiko Kusunoki, Kazuhito Kamei, Nobuhiro Okada, Nobuyoshi Yashiro, Akihiro Yauchi, Toru Ujihara, Kazuo Nakajima
Abstract:We performed solution growth of SiC single crystals from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT)....
119
Authors: Jessica Eid, Jean Louis Santailler, Bernard Ferrand, Pierre Ferret, J. Pesenti, Alain Basset, Antoine Passero, Alkyoni Mantzari, Efstathios K. Polychroniadis, Carole Balloud, P. Soares, Jean Camassel
Abstract:Cubic-silicon carbide crystals have been grown from solution by using the traveling-zone method. In this technique a molten silicon zone...
123
Authors: Shin Ichi Nishizawa, Michel Pons
Abstract:From the engineering point of view, SiC hot-wall epitaxy is a very important process in SiC semiconductor processes. There are lots of...
129
Authors: Bernd Thomas, Christian Hecht, René A. Stein, Peter Friedrichs
Abstract:The rapid market development for SiC-devices during the last years can be attributed particularly to the success in supplying high-quality...
135
Authors: Joseph J. Sumakeris, Peder Bergman, Mrinal K. Das, Christer Hallin, Brett A. Hull, Erik Janzén, H. Lendenmann, Michael J. O'Loughlin, Michael J. Paisley, Seo Young Ha, Marek Skowronski, John W. Palmour, Calvin H. Carter Jr.
Abstract:Forward voltage instability, or Vf drift, has confounded high voltage SiC device makers for the last several years. The SiC community has...
141
Authors: Kazutoshi Kojima, Tomohisa Kato, Satoshi Kuroda, Hajime Okumura, Kazuo Arai
Abstract:We have investigated the generation of new dislocations during the epitaxial growth of 4H-SiC layers. Dislocations were mainly propagated...
147
Authors: Takashi Aigo, M. Sawamura, Tatsuo Fujimoto, Masakazu Katsuno, Hirokatsu Yashiro, Hiroshi Tsuge, Masashi Nakabayashi, Taizo Hoshino, Noboru Ohtani
Abstract:4H-SiC epitaxial layers on Carbon-face (C-face) substrates were grown by a low-pressure hot-wall type chemical vapor deposition system. The...
153
Authors: Albert A. Burk, Michael J. O'Loughlin, Michael J. Paisley, Adrian R. Powell, M.F. Brady, R.T. Leonard, D.A. McClure
Abstract:Experimental results are presented for SiC epitaxial layer growth employing a large-area, up to 8x100-mm, warm-wall planetary SiC-VPE...
159
Authors: Francesco La Via, G. Galvagno, A. Firrincieli, Fabrizio Roccaforte, Salvatore Di Franco, Alfonso Ruggiero, Milo Barbera, Ricardo Reitano, Paolo Musumeci, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, F. Portuese, Giuseppe Abbondanza, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa
Abstract:The growth rate of 4H-SiC epi layers has been increased by a factor 3 (up to 18μm/h) with respect to the standard process with the...
163
Authors: Yaroslav Koshka, Huang De Lin, Galyna Melnychuk, Colin Wood
Abstract:The advantages of the CH3Cl carbon precursor were investigated in order to achieve good-quality homoepitaxial layers of the 4H-SiC polytype...
167
Showing 31 to 40 of 379 Paper Titles