Paper Title
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Authors: Huang De Lin, Jeffery L. Wyatt, Yaroslav Koshka
Abstract:In this work, the mechanism of the epitaxial growth of 4H SiC using CH3Cl as the carbon source gas was investigated. The experiments were...
171
Authors: Mike F. MacMillan, Mark J. Loboda, Gil Yong Chung, E.P. Carlson, Jian Wei Wan
Abstract:Epitaxial growth of SiC films was performed on 4H SiC n+ substrates utilizing a chlorosilane/propane chemistry in both single wafer and...
175
Authors: Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, F. Portuese, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa, Milo Barbera, Ricardo Reitano, Gaetano Foti, Francesco La Via
Abstract:4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the silicon precursor source together with ethylene as the carbon...
179
Authors: Jawad Ul Hassan, Christer Hallin, Peder Bergman, Erik Janzén
Abstract:Thick epitaxial layers of 4H-SiC both n- and p-type were grown using horizontal Hot- Wall CVD (HWCVD). No large difference in the carrier...
183
Authors: Rachael L. Myers-Ward, Y. Shishkin, Olof Kordina, I. Haselbarth, Stephen E. Saddow
Abstract:A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor using a standard chemistry of...
187
Authors: Guo Sheng Sun, Jin Ning, Quan Cheng Gong, Xin Gao, Lei Wang, Xing Fang Liu, Yi Ping Zeng, Jin Min Li
Abstract:Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4H-SiC epilayers. Homoepitaxial growth of...
191
Authors: Jie Zhang, Janice Mazzola, Carl Hoff, C. Rivas, Esteban Romano, Janna R. B. Casady, Michael S. Mazzola, Jeff B. Casady, Kevin Matocha
Abstract:This paper presents SiC CVD epitaxy for MESFET fabrication in a horizontal hot-wall reactor with gas foil rotation. Excellent uniformity of...
195
Authors: Francesco La Via, G. Galvagno, A. Firrincieli, Fabrizio Roccaforte, Salvatore Di Franco, Alfonso Ruggiero, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, F. Portuese, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa
Abstract:The influence of the epitaxial layer growth parameters on the electrical characteristics of Schottky diodes has been studied in detail....
199
Authors: Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki
Abstract:The epitaxial growth of SiC by a hot-wall CVD system using monomethylsilane (CH3SiH3) as a precursor is described. In the case of CH3SiH3...
203
Authors: Wook Bahng, Hui Jong Cheong, In Ho Kang, Sang Cheol Kim, Ki Hyun Kim, Nam Kyun Kim
Abstract:The initial homoepitaxial growth behavior on nearly on-axis 4H-SiC substrates was investigated. We have observed circular etch pits on the...
207
Showing 41 to 50 of 379 Paper Titles