HOME CONTACT My eBook

Username: Password:

> @scientific.net

Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

• Papers
• Abstracts
• buy eBook

• p501 Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy   [ 209 K ]
  Authors: Katsunori Danno, Tsunenobu Kimoto
• p505 Deep Level near E_C – 0.55 eV in Undoped 4H-SiC Substrates   [ 156 K ]
  Authors: W.C. Mitchel, William D. Mitchell, S.R. Smith, G.R. Landis, A.O. Evwaraye, Z.Q. Fang, David C. Look, J.R. Sizelove
• p509 Deep Traps in High-Purity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current Spectroscopy   [ 473 K ]
  Authors: Z.Q. Fang, B. Claflin, David C. Look, L. Polenta, J. Chen, Thomas Anderson, W.C. Mitchel
• p513 Quenching Photoconductivity and Photoelectric Memory in 6H-SiC   [ 158 K ]
  Authors: M. Duisenbaev
• p517 Deep Level Point Defects in Semi-Insulating SiC   [ 202 K ]
  Authors: Mary Ellen Zvanut, Won Woo Lee, Hai Yan Wang, W.C. Mitchel, William D. Mitchell
• p523 Divacancy and Its Identification: Theory   [ 178 K ]
  Authors: Adam Gali, M. Bockstedte, Nguyen Tien Son, T. Umeda, Junichi Isoya, Erik Janzén
• p527 Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC   [ 368 K ]
  Authors: Nguyen Tien Son, T. Umeda, Junichi Isoya, Adam Gali, M. Bockstedte, Björn Magnusson, Alexsandre Ellison, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh, Erik Janzén
• p531 Thermal Evolution of Defects in Semi-Insulating 4H SiC   [ 130 K ]
  Authors: W.E. Carlos, E.R. Glaser, N.Y. Garces, B.V. Shanabrook, Mark A. Fanton
• p535 Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR Study   [ 312 K ]
  Authors: Ivan V. Ilyin, Marina V. Muzafarova, E.N. Mokhov, Vladimir I. Sankin, P.G. Baranov, S.B. Orlinskii, J. Schmidt
• p539 Signature of the Negative Carbon Vacancy-Antisite Complex   [ 195 K ]
  Authors: M. Bockstedte, Adam Gali, T. Umeda, Nguyen Tien Son, Junichi Isoya, Erik Janzén
• p543 Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC   [ 355 K ]
  Authors: T. Umeda, Nguyen Tien Son, Junichi Isoya, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh, Erik Janzén
• p547 Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes   [ 16 M ]
  Authors: N.Y. Garces, W.E. Carlos, E.R. Glaser, Sung Wook Huh, Hun Jae Chung, Saurav Nigam, A.Y. Polyakov, Marek Skowronski
• p551 Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiC   [ 16 M ]
  Authors: M.V.B. Pinheiro, E. Rauls, Uwe Gerstmann, Siegmund Greulich-Weber, Johann Martin Spaeth, Harald Overhof
• p555 Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance   [ 175 K ]
  Authors: Marina V. Muzafarova, Ivan V. Ilyin, E.N. Mokhov, Vladimir I. Sankin, P.G. Baranov
• p559 Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC   [ 16 M ]
  Authors: E.N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel, Siegmund Greulich-Weber, E. Rauls, Uwe Gerstmann