The Ti3SiC2 materials were synthesized by hot pressing TiCx and Si powder mixtures. The matrix grains were lamellar, having a small amount of TiCx. The high-temperature stability was investigated by subjecting Ti3SiC2 to high-temperature oxidation up to 1200oC in air. Ti3SiC2 began to oxidize appreciably above 850oC. The oxidation resulted in the formation of the oxide layer that consisted of TiO2 and SiO2. The scales formed were adherent.