Paper Title:
P-Type and N-Type Bi2Te3/PbTe Functional Gradient Materials for Thermoelectric Power Generation
  Abstract

The p-type (Bi0.2Sb0.8)2Te3/(Pb0.7Sn0.3)Te functional gradient material (FGM) was fabricated by hot-pressing the mechanically alloyed (Bi0.2Sb0.8)2Te3 and the 0.5 at% Na2Te-doped (Pb0.7Sn0.3)Te powders. Also, the n-type Bi2(Te0.9Se0.1)3/PbTe FGM was processed by hot-pressing the mechanically alloyed Bi2(Te0.9Se0.1)3 and the 0.3 wt% Bi-doped PbTe powders. With △T larger than 300°C, the p-type (Bi0.2Sb0.8)2Te3/(Pb0.7Sn0.3)Te FGM exhibited larger thermoelectric output power than those of the (Bi0.2Sb0.8)2Te3 and the 0.5 at% Na2Te-doped (Pb0.7Sn0.3)Te alloys. For the n-type Bi2(Te0.9Se0.1)3/PbTe FGM, the thermoelectric output power superior to those of the Bi2(Te0.9Se0.1)3 and the 0.3 wt% Bi-doped PbTe was predicted at △T larger than 300°C.

  Info
Periodical
Materials Science Forum (Volumes 534-536)
Edited by
Duk Yong Yoon, Suk-Joong L. Kang, Kwang Yong Eun and Yong-Seog Kim
Pages
1493-1496
DOI
10.4028/www.scientific.net/MSF.534-536.1493
Citation
K. Y. Lee, T. S. Oh, "P-Type and N-Type Bi2Te3/PbTe Functional Gradient Materials for Thermoelectric Power Generation", Materials Science Forum, Vols. 534-536, pp. 1493-1496, 2007
Online since
January 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Tohru Sekino, Takumi Okamoto, Tomoko Kasuga, Takafumi Kusunose, Tadachika Nakayama, Koichi Niihara
Abstract:We have investigated a synthesis of metal (Nb, V, Cr, Mn, Co) -doped titania nanotubes using a solution chemical processing in order to...
251
Authors: Qiang Chen, De Jun Lan, Yi Chen, Du Min Lin, Xi Yue, Ding Quan Xiao, Jian Guo Zhu
Abstract:Lead-free piezoelectric ceramics lithium sodium potassium niobate (LixNayK1-x-y)NbO3 (LNKN100x/100y) have been synthesized by a conventional...
199
Authors: Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Shinobu Onoda, Takeshi Ohshima
Abstract:The mechanisms for the reduction in the hole concentration in lightly Al-doped p-type 4H-SiC epilayers by electron irradiation as well as in...
181
Authors: Geunsik Lim, Tariq Manzur, Aravinda Kar
Chapter 6: SiC Devices, Circuits and Systems
Abstract:An uncooled SiC-based electro-optic device is developed for gas sensing applications. P-type dopants Ga, Sc, P and Al are incorporated into...
1195
Authors: Zhong Qiu Xia, Rong Ping Li
Chapter 1: Material Science
Abstract:The band structure and the intensity of states of La-doped ZnTe were obtained using the plane wave ultra soft pseudo potential method based...
11