Paper Title:
Growth and Atomistic Structure Study of Disordered SiGe Mixed Semiconductors
  Abstract

The atomistic structure of Czochralski-grown SixGe1-x binary mixed semiconductor was studied experimentally and theoretically. By extended X-ray absorption fine structure (XAFS) studies it was found that bulk SiGe semiconductor is a random mixture and that the Ge-Ge, Ge-Si and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion against the alloy composition across the whole composition range 0 < x < 1, in good agreement with expectations derived from the ab-inito electronic structure calculations. The result indicates that SiGe is a suitable model for a disorder mixed material and that the bond lengths and bond angles are distorted with the composition.

  Info
Periodical
Materials Science Forum (Volumes 539-543)
Main Theme
Edited by
T. Chandra, K. Tsuzaki, M. Militzer , C. Ravindran
Pages
2043-2047
DOI
10.4028/www.scientific.net/MSF.539-543.2043
Citation
I. Yonenaga, M. Sakurai, M. H.F. Sluiter, "Growth and Atomistic Structure Study of Disordered SiGe Mixed Semiconductors", Materials Science Forum, Vols. 539-543, pp. 2043-2047, 2007
Online since
March 2007
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$32.00
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