Paper Title:
Preparation of Fe2VAl Thermoelectric Module by RF Sputtering
  Abstract

An attempt to prepare Fe2VAl deposited film and the thermoelectric module using RF sputtering has been made. Sputtering target has been prepared using mechanical alloying of metallic powders and the subsequent pulse current sintering process. The obtained deposited film has had a lack of aluminum content compared to the composition of the starting material. Controlling of aluminum content for the preparation of Fe2VAl sputtering target has made it possible to obtain the desired material composition. The film has had the experimental thermoelectric force being similar to the one estimated from the measured thermoelectric data of the materials. Fe2VAl thermoelectric module of eight pairs with a film thickness of 4 μm has had an electric force of 31mV and 5.6μW.

  Info
Periodical
Materials Science Forum (Volumes 539-543)
Main Theme
Edited by
T. Chandra, K. Tsuzaki, M. Militzer , C. Ravindran
Pages
3285-3289
DOI
10.4028/www.scientific.net/MSF.539-543.3285
Citation
A. Matsumoto, M. Mikami, K. Kobayashi, K. Ozaki, T. Nishio, "Preparation of Fe2VAl Thermoelectric Module by RF Sputtering", Materials Science Forum, Vols. 539-543, pp. 3285-3289, 2007
Online since
March 2007
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Price
$32.00
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