Hydrogen Sensing Characteristics of High Electron Mobility Transistor with a Catalytic Pd Metal |
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| Journal | Materials Science Forum (Volumes 539 - 543) |
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| Volume | THERMEC 2006 |
| Edited by | T. Chandra, K. Tsuzaki, M. Militzer , C. Ravindran |
| Pages | 5025-5030 |
| DOI | 10.4028/www.scientific.net/MSF.539-543.5025 |
| Citation | Kun Wei Lin, 2007, Materials Science Forum, 539-543, 5025 |
| Online since | March, 2007 |
| Authors | Kun Wei Lin |
| Keywords | (NH4)2Sx, HFET, Sulfur Treatment, Temperature-Dependent Characteristic |
| Abstract | In this work, the comprehensive study of an interesting Pd/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) based hydrogen sensor is implemented. The theoretical analysis and simulation are made by using a two-dimensional simulator Medici. In addition, a practical device is fabricated successfully. Based on the variations of the catalytic metal work function, the DC characteristics of experimental and simulated results are compared and studied. |
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