Paper Title:
Hydrogen Sensing Characteristics of High Electron Mobility Transistor with a Catalytic Pd Metal
  Abstract

In this work, the comprehensive study of an interesting Pd/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) based hydrogen sensor is implemented. The theoretical analysis and simulation are made by using a two-dimensional simulator Medici. In addition, a practical device is fabricated successfully. Based on the variations of the catalytic metal work function, the DC characteristics of experimental and simulated results are compared and studied.

  Info
Periodical
Materials Science Forum (Volumes 539-543)
Main Theme
Edited by
T. Chandra, K. Tsuzaki, M. Militzer , C. Ravindran
Pages
5025-5030
DOI
10.4028/www.scientific.net/MSF.539-543.5025
Citation
K. W. Lin, "Hydrogen Sensing Characteristics of High Electron Mobility Transistor with a Catalytic Pd Metal", Materials Science Forum, Vols. 539-543, pp. 5025-5030, 2007
Online since
March 2007
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Price
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