Paper Title:
Study on the Oxidation and Electrical Resistivity of Reaction-Bonded Silicon Carbide at High Temperature
  Abstract

The oxidation behavior and electrical resistivity of reaction-bonded silicon carbide (RB-SiC) at high temperature (900 °C) had been studied in this paper. The results showed that the weight of RB-SiC would be increased when it was oxidized at 900. The relationship between the weight-gain of RB-SiC and oxidation times followed the parabolic curve. The oxidation resistance of RB-SiC at 900 could increased by the increase of SiC particles sizes. But the electrical resistivity of RB-SiC had not affected by the oxidation at 900. The oxidation mechanism of RB-SiC and the affecting factor on oxidation of RB-SiC were analyzed and discussed.

  Info
Periodical
Materials Science Forum (Volumes 544-545)
Edited by
Hyungsun Kim, Junichi Hojo and Soo Wohn Lee
Pages
475-478
DOI
10.4028/www.scientific.net/MSF.544-545.475
Citation
Z. L. Lu, H. Xie, J. Q. Gao, Z. H. Jin, "Study on the Oxidation and Electrical Resistivity of Reaction-Bonded Silicon Carbide at High Temperature", Materials Science Forum, Vols. 544-545, pp. 475-478, 2007
Online since
May 2007
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Price
$32.00
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