Paper Title:
Chemical and Electrical Properties of ZnS Deposited with DEZ and H2S by Atomic Layer Deposition Method
  Abstract

ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl- Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.

  Info
Periodical
Materials Science Forum (Volumes 544-545)
Edited by
Hyungsun Kim, Junichi Hojo and Soo Wohn Lee
Pages
689-692
DOI
10.4028/www.scientific.net/MSF.544-545.689
Citation
S. W. Kuk, S. H. Bang, I. H. Kim, S. Y. Jeon, H. T. Jeon, H. H. Park, H. J. Chang, "Chemical and Electrical Properties of ZnS Deposited with DEZ and H2S by Atomic Layer Deposition Method", Materials Science Forum, Vols. 544-545, pp. 689-692, 2007
Online since
May 2007
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$32.00
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