Paper Title:
Effects of Post-Annealing on the Electrical and Optical Properties of ZnO Thin Films Grown on Al2O3 Substrates by Atomic Layer Epitaxy
  Abstract

Influence of nitrogen and oxygen annealing atmospheres on the carrier concentration, carrier mobility, electrical resistivity and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD) were compared. X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. The UV emission intensity for oxygen annealing is stronger than that for nitrogen annealing in the case of annealing at 600°C, but the difference decreases with the Increase of annealing temperature. The strongest UV emission is obtained by oxygen annealing at 800°C. However, from the viewpoint of electrical resistivity annealing at 1,000°C in either an oxygen or a nitrogen atmosphere is more desirable. Taking both the PL and electrical properties into consideration it may be concluded that optimum annealing condition for ZnO thin films grown on the sapphire substrate by ALD is an annealing temperature of 900°C and an annealing atmosphere of oxygen although the effects of annealing atmosphere on the optical and electrical properties are not so significant.

  Info
Periodical
Materials Science Forum (Volumes 544-545)
Edited by
Hyungsun Kim, Junichi Hojo and Soo Wohn Lee
Pages
729-732
DOI
10.4028/www.scientific.net/MSF.544-545.729
Citation
C. M. Lee, Y. J. Cho, H. J. Kim, W. W. Lee, H. W. Kim, C. K. Hwangbo, J. G. Lee, "Effects of Post-Annealing on the Electrical and Optical Properties of ZnO Thin Films Grown on Al2O3 Substrates by Atomic Layer Epitaxy", Materials Science Forum, Vols. 544-545, pp. 729-732, 2007
Online since
May 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Chong Mu Lee, Yeon Kyu Park, Anna Park, Choong Mo Kim
Abstract:This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL...
670
Authors: Yong June Choi, Kyung Mun Kang, Hyung Ho Park
Chapter 10: Engineering Materials and Processing Technologies
Abstract:The post-annealing effects on the surface morphological changes of undoped and Al-doped ZnO (ZnO:Al) thin films deposited by atomic layer...
2492
Authors: J.L. Tian, Gui Gen Wang, Hua Yu Zhang
Abstract:ZnO thin films were deposited on Si (100) substrates by atomic layer deposition. Annealing treatments for the as-deposited films were...
92