Paper Title:
Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate
  Abstract

The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1× 10-8 A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.

  Info
Periodical
Materials Science Forum (Volumes 544-545)
Edited by
Hyungsun Kim, Junichi Hojo and Soo Wohn Lee
Pages
753-756
DOI
10.4028/www.scientific.net/MSF.544-545.753
Citation
I. J. Back, S. C. Gong, H. S. Lim, I. S. Shin, S. W. Kuk, I. H. Kim, H. T. Jeon, H. H. Park, H. J. Chang, "Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate", Materials Science Forum, Vols. 544-545, pp. 753-756, 2007
Online since
May 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: S.G. Kim, Seung Boo Jung, Ji Hun Oh, H.J. Kim, Yong Hyeon Shin
Abstract:Polycrystalline ZnO thin films were for the first time deposited on SiO2/Si (100) substrate using 2-step deposition; atomic layer deposition...
977
Authors: K.H. Baik, Seung Joon Ahn, Chul Geun Park, Seung Young Lee, Seung Joon Ahn
Abstract:We investigated the characteristics of the HfO2 layer deposited by ALD method in MOSFET devices where the HfO2 film is incorporated as the...
190
Authors: Seoung Woo Kuk, Seok Hwan Bang, In Hoe Kim, Sun Yeol Jeon, Hyeong Tag Jeon, Hyung Ho Park, Ho Jung Chang
Abstract:ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl- Zinc (DEZ) and hydrogen sulfide (H2S) for the application of...
689
Authors: Emanuela Schilirò, Salvatore Di Franco, Patrick Fiorenza, Corrado Bongiorno, Hassan Gargouri, Mario Saggio, Raffaella Lo Nigro, Fabrizio Roccaforte
3.2 MOS Processing, SiC-SiO2 Interfaces and other Dielectrics
Abstract:This work reports on the growth and characterization of Al2O3 films on 4H-SiC, by Plasma Enhanced-Atomic Layer...
685