Paper Title:
Study on Indium Tin Oxide Films Deposited Using Different Conductive ITO Targets by DC Magnetron Sputtering
  Abstract

Indium Tin Oxide (ITO) films were deposited on nonalkali glass substrate by dc magnetron sputtering using high density ITO targets with different conductivitis. Depositions were carried out at total gas pressure (Ptot) of 0.6 Pa, substrate temperature (Ts) of RT, oxygen flow ratio [O2/(O2+Ar)] of 0 ~ 3.0 % and dc power of 100W. High conductivity target showed relatively high stability in electrical property with increasing target erosion ratio. Optimum O2 addition ratio to obtain the lowest resistivity was decreased with increasing target erosion ratio. High conductivity ITO target could lead to decrease in micro-nodule formation on the target surface because of high cooling. The decrease in resistivity was observed for the film annealed at H2 introduction or without O2 addition in vacuum, where could be attributed to increase in carrier density.

  Info
Periodical
Materials Science Forum (Volumes 544-545)
Edited by
Hyungsun Kim, Junichi Hojo and Soo Wohn Lee
Pages
833-836
DOI
10.4028/www.scientific.net/MSF.544-545.833
Citation
J. H. Park, S. C. Lee, G. H. Lee, P. K. Song, "Study on Indium Tin Oxide Films Deposited Using Different Conductive ITO Targets by DC Magnetron Sputtering", Materials Science Forum, Vols. 544-545, pp. 833-836, 2007
Online since
May 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Tian Dong Cao, Chang Zi Chen
Chapter 1: Materials Science and Technologies
Abstract:Plasma surface processing technology can improve the mechanical properties, the corrosion resistance and chemical properties of the parts;...
21
Authors: Shafaq Mardhiyana Mohamat Kasim, Nor Azira Akma Shaari, Raudah Abu Bakar, Sukreen Hana Herman
Chapter 3: Composite Materials and Composite Properties of Materials
Abstract:Single layer of titanium dioxide (TiO2) is common metal oxide in fabricating memristor device. In this study, two types of...
308