Paper Title:
Epitaxial Growth of CeO2 Buffer Layers on Both YSZ Single Crystal and Textured Ni5W Substrates by MOD Method
  Abstract

CeO2 has been considered as one of the most lattice compatible and chemically stable materials for YBa2Cu3O7-x coated conductors. In this paper, we presented the epitaxial growth of CeO2 thin film on both YSZ single crystal and cube textured Ni5W substrates by MOD method. Homogenous, crack-free and dense CeO2 thin films on both substrates with sharp biaxially cube texture were fabricated by post-annealing the precursor films at 1000-1150°C. For the CeO2 film on the textured Ni5W substrate, the FWHM values of (111) Phi-scan and (002) rocking curve were around 6°and 7°, respectively, the surface roughness was less than 2 nm over an area of 1μm×1μm observed by AFM. It was found that the CeO2 thin film improved both the in-plane orientation and surface roughness of the Ni5W substrate, indicating that the as deposited CeO2 films were suitable for the further growth of YBCO superconductor layer.

  Info
Periodical
Materials Science Forum (Volumes 546-549)
Edited by
Yafang Han et al.
Pages
2011-2014
DOI
10.4028/www.scientific.net/MSF.546-549.2011
Citation
Y. X. Zhang, H. L. Suo, Y. Zhao, M. Liu, R. Wang, D. He, L. Ma, M. L. Zhou, "Epitaxial Growth of CeO2 Buffer Layers on Both YSZ Single Crystal and Textured Ni5W Substrates by MOD Method", Materials Science Forum, Vols. 546-549, pp. 2011-2014, 2007
Online since
May 2007
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