Paper Title:
Comparative Studies of Nanoscale SiC Whisker and Si/N/C Doped MgB2 Tapes
  Abstract

Fe-sheathed MgB2 tapes were prepared by the in situ powder-in-tube (PIT) technique using nanoscale Si/N/C and SiC whisker as doping materials, respectively. It is found that the doped tapes exhibited superior field performance and higher critical current (JC) values than the undoped tapes in the magnetic field up to 12 T. Moreover, the improvement of JC for the SiC whisker doped samples was more significantly than that in Si/N/C doped tapes, while flux pinning ability enhancements were similar. It is proposed that the difference of impurity content in MgB2 matrix, which affects the grain connectivity, is responsible for JC value difference between Si/N/C and SiC whisker doped samples.

  Info
Periodical
Materials Science Forum (Volumes 546-549)
Edited by
Yafang Han et al.
Pages
2041-2045
DOI
10.4028/www.scientific.net/MSF.546-549.2041
Citation
X. P. Zhang, Y. W. Ma, Z. S. Gao, D. L. Wang, Z. G. Yu, G. Nishijima, K. Watanabe, J. D. Guo, "Comparative Studies of Nanoscale SiC Whisker and Si/N/C Doped MgB2 Tapes", Materials Science Forum, Vols. 546-549, pp. 2041-2045, 2007
Online since
May 2007
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$32.00
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