Paper Title:
MgB2 Thick Film Grown on Silicon Carbide Substrate by Hybrid Physical-Chemical Vapor Deposition
  Abstract

We have successfully synthesized MgB2 thick films on 4H-SiC substrate by hybrid physical-chemical deposition (HPCVD). They have TC above 40 K, X-ray diffraction (XRD) shows the polycrystal bulk like structure. And JC estimated using magnetic hysteresis loops (MHLs) and Bean model is 7.4 MA/cm2 in self field, at 5 K.

  Info
Periodical
Materials Science Forum (Volumes 546-549)
Edited by
Yafang Han et al.
Pages
2067-2070
DOI
10.4028/www.scientific.net/MSF.546-549.2067
Citation
F. Li, T. Guo, K. C. Zhang, L. P. Chen, C. P. Chen, Q. R. Feng, "MgB2 Thick Film Grown on Silicon Carbide Substrate by Hybrid Physical-Chemical Vapor Deposition", Materials Science Forum, Vols. 546-549, pp. 2067-2070, 2007
Online since
May 2007
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