Paper Title:
Plasma Etching for the Application to Low-K Dielectrics Devices
  Abstract

We present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N2/O2 flow ratio and bias power affected the PR etching rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material.

  Info
Periodical
Edited by
Dragan P. Uskoković, Slobodan K. Milonjić and Dejan I. Raković
Pages
113-118
DOI
10.4028/www.scientific.net/MSF.555.113
Citation
J. W. Lee, H. W. Kim, J. W. Han, M. S. Kim, B. D. Yoo, M.H. Kim, C.H. Lee, C.H. Lee, C. H. Lim, S. K. Hwang, C. Lee, D.J. Chung, S.G. Park, S.G. Lee, B.H. O, J. Kim, S.P. Chang, S.H. Lee, S. Y. Chai, W. I. Lee, S.E. Park, K. Kim, D.K. Choi, C.W. Chung, "Plasma Etching for the Application to Low-K Dielectrics Devices", Materials Science Forum, Vol. 555, pp. 113-118, 2007
Online since
September 2007
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$32.00
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