Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates |
| Journal |
Materials Science Forum (Volume 555) |
| Volume |
Research Trends in Contemporary Materials Science |
| Edited by |
Dragan P. Uskoković, Slobodan K. Milonjić and Dejan I. Raković |
| Pages |
35-40 |
| DOI |
10.4028/www.scientific.net/MSF.555.35 |
| Online since |
September, 2007 |
| Authors |
M. Novaković,
M. Popović,
D. Peruško,
I. Radović,
V. Milinović,
M. Milosavljević
|
| Keywords |
CrN Layers, Electron Microscopy, Ion Implantation, Microstructure, Nanoparticle |
| Abstract |
We present a study of the micro-structural changes induced in Cr-N layers by irradiation
with argon ions. The layers were deposited by reactive ion sputtering on (100) Si wafers, to a
thickness of 240-280 nm, at different nitrogen partial pressures and different substrate temperatures.
The samples were subsequently irradiated with 120 keV Ar+, to 1x1015 and 1x1016 ions/cm2.
Structural characterization was performed with Rutherford backscattering spectroscopy, x-ray
diffraction analysis and transmission electron microscopy, and we also did electrical resistivity
measurements on the samples. It has been found that the layers grow in the form of a polycrystalline
columnar structure, with a columnar width of a few tens of nm. The layer composition, Cr2N or
CrN, strongly depends on the nitrogen partial pressure during deposition. Ion irradiation induces
local micro-structural changes, formation of nano-particles and defects, though the structures retain
their polycrystalline nature. The induced crystalline defects yield an increase of electrical resistivity
after ion irradiation. |
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