Paper Title:
Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates
  Abstract

We present a study of the micro-structural changes induced in Cr-N layers by irradiation with argon ions. The layers were deposited by reactive ion sputtering on (100) Si wafers, to a thickness of 240-280 nm, at different nitrogen partial pressures and different substrate temperatures. The samples were subsequently irradiated with 120 keV Ar+, to 1x1015 and 1x1016 ions/cm2. Structural characterization was performed with Rutherford backscattering spectroscopy, x-ray diffraction analysis and transmission electron microscopy, and we also did electrical resistivity measurements on the samples. It has been found that the layers grow in the form of a polycrystalline columnar structure, with a columnar width of a few tens of nm. The layer composition, Cr2N or CrN, strongly depends on the nitrogen partial pressure during deposition. Ion irradiation induces local micro-structural changes, formation of nano-particles and defects, though the structures retain their polycrystalline nature. The induced crystalline defects yield an increase of electrical resistivity after ion irradiation.

  Info
Periodical
Edited by
Dragan P. Uskoković, Slobodan K. Milonjić and Dejan I. Raković
Pages
35-40
DOI
10.4028/www.scientific.net/MSF.555.35
Citation
M. Novaković, M. Popović, D. Peruško, I. Radović, V. Milinović, M. Milosavljević, "Ion Implantation Induced Modifications in Reactively Sputtered Cr-N Layers on Si Substrates", Materials Science Forum, Vol. 555, pp. 35-40, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Zhi Hai Cai, Zhang Ping, Yue Lan Di
Abstract:Approximately 2 μm thick CrN and CrAlN coatings were synthesized on silicon and spring steel substrate by multi-arc ion plating technology....
2430
Authors: Chang Wei Zou, Jun Zhang, Wei Xie, Le Xi Shao
Abstract:CrN films with deposition rates of 30-190 nm/min were deposited on Si (111) substrates by middle-frequency magnetron sputtering methods. XRD,...
901
Authors: Xiao Mei Yuan, Shi Liang Yang, Teng Li, Guan Gan Zhang
Chapter 3: Material Engineering and Science
Abstract:The CrN films and CrBN films were successfully deposited by medium frequency magnetron sputtering in a mixture gas of nitrogen and argon....
3086
Authors: Tao Liu, Xin Hui Zhang, Xiao Mei Yuan, Xiao Hui Zheng, Guang An Zhang
Chapter2: Research on Material Engineering and Material Applications
Abstract:A series of CrTiN films were successfully deposited by medium frequency magnetron sputtering in a mixture gas of nitrogen and argon. X-ray...
301