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Particle-In-Cell Modelling of a Neutral Beam Source for Material Processing in Nanoscale Structures Fabrication

Journal Materials Science Forum (Volume 555)
Volume Research Trends in Contemporary Materials Science
Edited by Dragan P. Uskoković, Slobodan K. Milonjić and Dejan I. Raković
Pages 47-52
DOI 10.4028/www.scientific.net/MSF.555.47
Citation M. Radmilović-Radjenović et al., 2007, Materials Science Forum, 555, 47
Online since September, 2007
Authors M. Radmilović-Radjenović, Z.Lj. Petrović, Željka Nikitović, A. Strinić, V. Stojanović, Aleksandra Nina, B. Radjenović
Keywords Charging Damage, Etching, Material Processing, Nanoscale Structure, Neutralization Efficiency
Abstract

Neutral beam processing has evolved into one of the most promising methods for overcoming plasma process induced damage. Surface treatment by neutrals avoids problems with surface charging effects, frequently encountered when using common ion treatment, especially for low k-materials. In this paper, the influence of various parameters on the neutralization of ion beams in Ar-CF4 mixture based on a Particle in Cell with Monte Carlo collisions (PIC/MCC) simulation is studied. The efficiency of neutralization has been treated by considering both surface neutralization of ions and collisions of ions in the gas.

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