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Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts

• p3 Quality Aspects for the Production of SiC Bulk Crystals   [ 549 K ]
  Authors: Thomas L. Straubinger, Michael Rasp, Erwin Schmitt, Arnd Dietrich Weber
• p9 An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method   [ 4 M ]
  Authors: Jung Doo Seo, Joon Ho An, Jung Gon Kim, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku
• p13 Growth and Characterization of ¹³C Enriched 4H-SiC for Fundamental Materials Studies   [ 176 K ]
  Authors: Yeon Suk Jang, Sakwe Aloysius Sakwe, Peter J. Wellmann, Sandrine Juillaguet, Hervé Peyre, Jean Camassel, John W. Steeds
• p17 Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals   [ 1 M ]
  Authors: Octavian Filip, Boris M. Epelbaum, Matthias Bickermann, Albrecht Winnacker
• p21 Growth Induced Stacking Fault Formation in 4H-SiC   [ 852 K ]
  Authors: D. Siche, M. Albrecht, H. J. Rost, Andreas Sendzik
• p25 Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method   [ 3 M ]
  Authors: Jung Gon Kim, Joon Ho An, Jung Doo Seo, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku
• p29 Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution   [ 211 K ]
  Authors: Jessica Eid, Jean Louis Santailler, Bernard Ferrand, Guy Rolland, Michel Burdin, R. Lewandowska, Jean Camassel
• p35 Growth and Electrical Characterization of 4H-SiC Epilayers   [ 323 K ]
  Authors: Tsunenobu Kimoto, Katsunori Danno, T. Hori, Hiroyuki Matsunami
• p41 Growth of SiC from a Liquid Phase at Low Temperature   [ 1 M ]
  Authors: Gabriel Ferro, Maher Soueidan, Olivier Kim-Hak, François Cauwet, Yves Monteil
• p47 Thick Epilayer for Power Devices   [ 2 M ]
  Authors: Anne Henry, Jawad Hassan, Henrik Pedersen, Franziska Christine Beyer, J. Peder Bergman, S. Andersson, Erik Janzén, Phillippe Godignon
• p53 4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate   [ 272 K ]
  Authors: Jawad Hassan, J. Peder Bergman, Anne Henry, Henrik Pedersen, Patrick J. McNally, Erik Janzén
• p57 A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process   [ 280 K ]
  Authors: James D. Oliver, Brian H. Ponczak
• p61 Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling   [ 551 K ]
  Authors: Y. Shishkin, Rachael L. Myers-Ward, Stephen E. Saddow, Alexander Galyukov, A.N. Vorob'ev, D. Brovin, D. Bazarevskiy, R.A. Talalaev, Yuri N. Makarov
• p65 Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers   [ 1 M ]
  Authors: Maher Soueidan, Gabriel Ferro, B. Nsouli, Nada Habka, Veronique Soulière, Ghassan Younes, K. Zahraman, Jean Marie Bluet, Yves Monteil
• p69 Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates   [ 3 M ]
  Authors: Mike F. MacMillan, Mark J. Loboda, Jian Wei Wan, Gil Yong Chung, E.P. Carlson, Michael J. Spaulding, D. Deese