Silicon Carbide and Related Materials 2006
| Paper Title | Page |
|---|---|
|
Quality Aspects for the Production of SiC Bulk Crystals Authors: Thomas L. Straubinger, Michael Rasp, Erwin Schmitt, Arnd Dietrich Weber |
3 |
|
An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method Authors: Jung Doo Seo, Joon Ho An, Jung Gon Kim, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku |
9 |
|
Growth and Characterization of 13C Enriched 4H-SiC for Fundamental Materials Studies Authors: Yeon Suk Jang, Sakwe Aloysius Sakwe, Peter Wellmann, Sandrine Juillaguet, Hervé Peyre, Jean Camassel, John W. Steeds |
13 |
|
Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals Authors: Octavian Filip, Boris M. Epelbaum, Matthias Bickermann, Albrecht Winnacker |
17 |
|
Growth Induced Stacking Fault Formation in 4H-SiC Authors: D. Siche, M. Albrecht, H. J. Rost, Andreas Sendzik |
21 |
|
Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method Authors: Jung Gon Kim, Joon Ho An, Jung Doo Seo, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku |
25 |
|
Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution Authors: Jessica Eid, Jean Louis Santailler, Bernard Ferrand, Guy Rolland, Michel Burdin, R. Lewandowska, Jean Camassel |
29 |
|
Growth and Electrical Characterization of 4H-SiC Epilayers Authors: Tsunenobu Kimoto, Katsunori Danno, T. Hori, Hiroyuki Matsunami |
35 |
|
Growth of SiC from a Liquid Phase at Low Temperature Authors: Gabriel Ferro, Maher Soueidan, Olivier Kim-Hak, François Cauwet, Yves Monteil |
41 |
|
Thick Epilayer for Power Devices Authors: Anne Henry, Jawad ul Hassan, Henrik Pedersen, Franziska Christine Beyer, Peder Bergman, Sven Andersson, Erik Janzén, Phillippe Godignon |
47 |
