Paper Title:
New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process
  Abstract

In this paper, we propose new designs of Schottky, JBS and PiN diodes, which process technology is compatible with that of vertical power SiC JFETs. Three novel diode designs are proposed and we report their electrical characteristics. The P+ buried layer implant of the JFET is used for the PiN anode formation and for the P+ islands of the JBS. The Schottky diode differs from a standard Schottky diode since buried rings below the Schottky contact region have been included and the anode metal layer also contacts the buried P+ region at the diode periphery. With this last approach, the resulting Schottky diodes show low leakage currents and surge current capability, with a lower on-state voltage than the JBS.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
1003-1006
DOI
10.4028/www.scientific.net/MSF.556-557.1003
Citation
P. Brosselard, D. Tournier, M. Vellvehi, J. Montserrat, P. Godignon, J. Millan, "New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process", Materials Science Forum, Vols. 556-557, pp. 1003-1006, 2007
Online since
September 2007
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Price
$32.00
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