Paper Title:
High Quality Uniform SiC Epitaxy for Power Device Applications
  Abstract

In this paper we present highly uniform SiC epitaxy in a horizontal hot-wall CVD reactor with wafer rotation. Epilayers with excellent thickness uniformity of better than 1% and doping uniformity better than 5% are obtained on 3-in, 4° off-axis substrates. The same growth conditions for uniform epitaxy also generate smooth surface morphology for the 4° epiwafers. Well controlled doping for both n- and p-type epilayers is obtained. Abrupt interface transition between n- and pdoped layers in a wide doping range is demonstrated. Tight process control for both thickness and doping is evidenced by the data collected from the epi operations. The average deviation from target is 2.5% for thickness and 6% for doping. PiN diodes fabricated on a standard 3-in, 4° epiwafer have shown impressive performance. More than half of the 1 mm2 devices block 1 kV (2.3 MV/cm) with a low leakage current of 1 μA.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
101-104
DOI
10.4028/www.scientific.net/MSF.556-557.101
Citation
J. Zhang, E. Romano, J. Mazzola, S. G. Sunkari, C. Hoff, I. Sankin, M. S. Mazzola, "High Quality Uniform SiC Epitaxy for Power Device Applications", Materials Science Forum, Vols. 556-557, pp. 101-104, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: A. Savtchouk, E. Oborina, A.M. Hoff, J. Lagowski
755
Authors: Bernd Thomas, Christian Hecht
Abstract:In this paper we present recent results of epitaxial growth of 4H-SiC on 3” (0001) 8° and 4° off-oriented wafers using a multi-wafer hot-wall...
141
Authors: Giuseppe Condorelli, Marco Mauceri, Giuseppe Pistone, L.M.S. Perdicaro, Giuseppe Abbondanza, F. Portuese, Gian Luca Valente, Danilo Crippa, Filippo Giannazzo, Francesco La Via
Abstract:A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor; Nitrogen...
127
Authors: Lin Dong, Guo Sheng Sun, Jun Yu, Guo Guo Yan, Wan Shun Zhao, Lei Wang, Xin He Zhang, Xi Guang Li, Zhan Guo Wang
Chapter 3: Epitaxial Growth 4H SiC
Abstract:We present our recent results on of 10 × 100 mm 4H-SiC epitaxy by a warm-wall planetary reactor at a growth rate of 10 μm/h. The epilayers...
239
Authors: Tatsuya Masuda, Akira Miyasaka, Jun Norimatsu, Yutaka Tajima, Daisuke Muto, Kenji Momose, Hitoshi Osawa
1.2 Epitaxial and Thin Films Growth
Abstract:For the popularization of SiC power device, improvement on both productivity and quality of 150 mm diameter SiC epitaxial wafer is...
201