Paper Title:
Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN
  Abstract

In this work, the structural and electrical properties of Ti/Al/Ni/Au contacts on n-type Gallium Nitride were studied. An ohmic behaviour was observed after annealing above 700°C. The structural analysis showed the formation of an interfacial TiN layer and different phases in the reacted layer (AlNi, AlAu4, Al2Au) upon annealing. The temperature dependence of the specific contact resistance demonstrated that the current transport occurs through thermoionic field emission in the contacts annealed at 600°C, and field emission after annealing at higher temperatures. By fitting the data with theoretical models, a reduction of the Schottky barrier from 1.21eV after annealing at 600°C to 0.81eV at 800°C was demonstrated, together with a strong increase of the carrier concentration at the interface. The reduction of the contact resistance upon annealing was discussed by correlating the structural and electrical characteristics of the contacts.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
1027-1030
DOI
10.4028/www.scientific.net/MSF.556-557.1027
Citation
F. Iucolano, F. Roccaforte, F. Giannazzo, A. Alberti, V. Raineri, "Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN", Materials Science Forum, Vols. 556-557, pp. 1027-1030, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Junji Senzaki, Shinichi Nakashima
905
Authors: Keiko Fujihira, Yoichiro Tarui, Kenichi Ohtsuka, Masayuki Imaizumi, Tetsuya Takami
Abstract:The effect of N2O anneal on channel mobility of inversion-type 4H-SiC n-channel MOSFET has been systematically investigated. It is found...
697
Authors: Akimasa Kinoshita, Takashi Nishi, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:The reaction and phase formation of the Ti/SiC Schottky contact as a function of the annealing temperature (400~700oC) were investigated....
643
Authors: Hirofumi Nagatsuma, Shin Ichiro Kuroki, Milantha de Silva, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takamaro Kikkawa, Mikael Östling, Carl Mikael Zetterling
3.1 Doping, Implantation and Contacts
Abstract:4H-SiC nMOSFETs with As-doped S/D and NbNi silicide ohmic contacts were demonstrated for radiation-hard CMOS electronics. The threshold...
573