Paper Title:
Employing Discontinuous and Continuous Growth Modes for Preparation of AlN Nanostructures on SiC Substrates
  Abstract

In this report we present results on growth and characterization of AlN wires and thin films on SiC substrates. We have employed PVT technique in close space geometry for AlN deposition on SiC off oriented substrates, most of which were prepared to have scratch-free smooth as-grown surface by SiC sublimation epitaxy. By manipulating the surface kinetics we have been able to determine growth conditions yielding discontinuous or continuous morphologies corresponding to nanowires and thin films, respectively. A particular feature of the latter experiments is the fast temperature ramp up at the growth initiation. The AlN surface morphology was characterized by optical, AFM and XRD tools, which showed good crystal quality independent of the growth mode.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
1031-1034
DOI
10.4028/www.scientific.net/MSF.556-557.1031
Citation
G. R. Yazdi, M. Syväjärvi, R. Vasiliauskas, R. Yakimova, "Employing Discontinuous and Continuous Growth Modes for Preparation of AlN Nanostructures on SiC Substrates", Materials Science Forum, Vols. 556-557, pp. 1031-1034, 2007
Online since
September 2007
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Price
$32.00
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