Paper Title:
Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection
  Abstract

Homoepitaxial growth of 4H-SiC p+/π/n- multi-epilayer on n+ substrate and in-situ doping of p+ and π-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H2. The surface morphologies, homogeneities and doping concentrations of the n--single-epilayers and the p+/π/n- multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM and Raman investigation showed that both single- and multi-epilayers have good surface morphologies and homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in π layer. The UV photodetectors fabricated on 4H-SiC p+/π/n- multi-epilayers showed low dark current and high detectivity in the UV range.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
109-112
DOI
10.4028/www.scientific.net/MSF.556-557.109
Citation
X. F. Liu, G. S. Sun, Y. M. Zhao, J. Ning, J.Y. Li, L. Wang, W. S. Zhao, M.C. Luo, J. M. Li, "Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection ", Materials Science Forum, Vols. 556-557, pp. 109-112, 2007
Online since
September 2007
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Price
$32.00
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