Paper Title:
In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition
  Abstract

A quadrupole mass spectrometer unit was utilized to accurately detect the chemical species present inside a SiC CVD reactor growth chamber before, during, and after epitaxial deposition. The in-situ mass spectrometer has been able to confirm the presence of silane (SiH4) and propane (C3H8) decomposition products (eg. Si and CH4) that were predicted from chemical modelling, and give insight into specific reaction kinetics. Additionally, the mass spectrometer has positively detected trace amounts of oxygen, which has helped to identify process weaknesses and possible sources of vacuum leaks.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
121-124
DOI
10.4028/www.scientific.net/MSF.556-557.121
Citation
B. H. Ponczak, J. D. Oliver , S. Cho, G. W. Rubloff, "In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition", Materials Science Forum, Vols. 556-557, pp. 121-124, 2007
Online since
September 2007
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Price
$32.00
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