Paper Title:
Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices
  Abstract

Cold-wall vapor phase epitaxy was utilized to grow uniform 4H-SiC layers with abrupt doping interfaces on 4o off-axis substrates. Concentrations of Al were reduced roughly 200x after 0.1 μm of epitaxy after trimethylaluminum flow was stopped. Thickness uniformity of cold-wall epitaxy across 3” wafers was as good as 3.2%. Minority carrier diffusion lengths of 27 μm-thick 4H-SiC epitaxy grown in a cold-wall design were as high as 58 μm.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
141-144
DOI
10.4028/www.scientific.net/MSF.556-557.141
Citation
L.B. Rowland, G. Dunne, J. Fronheiser, S. I. Soloviev, "Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices", Materials Science Forum, Vols. 556-557, pp. 141-144, 2007
Online since
September 2007
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Price
$32.00
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