Paper Title:
SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties
  Abstract

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
153-156
DOI
10.4028/www.scientific.net/MSF.556-557.153
Citation
C. K. Park, G. S. Lee, J. Y. Lee, M. O. Kyun, W. J. Lee, B. C. Shin, S. Nishino, "SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties", Materials Science Forum, Vols. 556-557, pp. 153-156, 2007
Online since
September 2007
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Price
$32.00
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