Paper Title:
Carbonization of Porous Silicon for 3C-SiC Growth
  Abstract

In the present work, the carbonization of porous silicon for the subsequent 3C-SiC growth has been systematically studied. The effect of temperature and acetylene flow-rate on the chemical state of the surface and structure relaxation was studied. It was found that the porous nano-crystalline morphology is unstable and tends to recrystallize in temperature range typical of 3C-SiC growth on Si (10000C-13000C). The carbonization impedes recrystallization at 10000C, but at 13000C the full recrystallization takes place. Pyrolytic amorphous graphite-like carbon was found on porous silicon carbonized at temperature and with acetylene flow-rate above critical values.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
167-170
DOI
10.4028/www.scientific.net/MSF.556-557.167
Citation
A.V. Vasin, Y. Ishikawa, N. Shibata, J. Salonen, V. P. Lehto, "Carbonization of Porous Silicon for 3C-SiC Growth", Materials Science Forum, Vols. 556-557, pp. 167-170, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: M.J. Hernández, M. Cervera, J. Piqueras, T. del Caño, J. Jiménez
309
Authors: Yasuo Hirabayashi, Satoru Kaneko, Kensuke Akiyama
Abstract:The carbonization conditions (acetylene pressure and heating rate) to obtain close carbonized layer covered on Si(001) substrate without...
247
Authors: Elena Tschumak, Katja Tonisch, Jörg Pezoldt, Donat J. As
Abstract:Cubic gallium nitride epitaxial layers grown on differently carbonized silicon substrates were studied by high resolution X-ray diffraction....
943
Authors: Jörg Pezoldt, Thomas Stauden, Florentina Niebelschütz, Mohamad Adnan Alsioufy, Richard Nader, Pierre M. Masri
Abstract:Germanium modified silicon surfaces in combination with two step epitaxial growth technique consisting in conversion of the Si(100) substrate...
159
Authors: Hee Tae Lee, Hee Jun Lee, Mi Seon Park, Yeon Suk Jang, Won Jae Lee, Jung Gon Kim, Shigehiro Nishino
Chapter I: SiC Material
Abstract:The 3C-SiC (111) layer has been grown on Si (110) substrate by using hexachloro-disilane (HCDS) and propane. The propane flow rate was...
197