Paper Title:
Carbonization Study of Different Silicon Orientations
  Abstract

3C-SiC/Si heteroepitaxy is hampered by large mismatches in lattice parameters (19.7%) and thermal expansion coefficient (8%) leading to 3C-SiC films containing high defects density. To reduce the presence of defects, a multi-step growth process in a CVD reactor is used. The aim of the work is to study the effect of carbonization on differently oriented Si surfaces, experiencing a 200°C-wide temperature range in a CVD reactor, to improve the crystalline quality. TEM analysis are carried out to evaluate thickness, crystal orientations and defects of carbonized layers with respect to the time-dependence of the process and to the different orientations of the Si substrate. It will be shown that process-related defects are strictly correlated to the substrate orientation either for size, density, occupied area, shape or thickness. Uniform, flat and crystalline thin SiC films are obtained with a low defect density.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
171-174
DOI
10.4028/www.scientific.net/MSF.556-557.171
Citation
A. Severino, C. Bongiorno, S. Leone, M. Mauceri, G. Pistone, G. Condorelli, G. Abbondanza, F. Portuese, G. Foti, F. La Via, "Carbonization Study of Different Silicon Orientations ", Materials Science Forum, Vols. 556-557, pp. 171-174, 2007
Online since
September 2007
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Price
$32.00
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