Paper Title:
Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates
  Abstract

3C-SiC epitaxial layers with a thickness of up to 100 μm and area of ~0.3-0.5 cm2 have been grown by sublimation epitaxy on hexagonal (6H-SiC) substrates at a maximum growth rate of about 200 μm per hour. The epilayers obtained are of n-type (Nd-Na ~ 1017 -1018 cm-3). According to X-ray data, the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The donor-acceptor (Al-N) recombination band with hνmax ~ 2.12 eV predominates in the photoluminescence (PL) spectrum. A detailed analysis of a PL spectrum measured at 6 K is presented. A conclusion is made that the epitaxial layers can be used as substrates for electronic devices based on 3C-SiC.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
175-178
DOI
10.4028/www.scientific.net/MSF.556-557.175
Citation
A. A. Lebedev, V.V. Zelenin, P. L. Abramov, E. V. Bogdanova, S. P. Lebedev, D.K. Nel'son, B. S. Razbirin, M.P. Scheglov, A. S. Tregubova, M. Syväjärvi, R. Yakimova, "Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates", Materials Science Forum, Vols. 556-557, pp. 175-178, 2007
Online since
September 2007
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