How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism
| Periodical | Materials Science Forum (Volumes 556 - 557) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2006 |
| Edited by | N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall |
| Pages | 187-190 |
| DOI | 10.4028/www.scientific.net/MSF.556-557.187 |
| Citation | Maher Soueidan et al., 2007, Materials Science Forum, 556-557, 187 |
| Online since | September, 2007 |
| Authors | Maher Soueidan, Olivier Kim-Hak, Gabriel Ferro, Patrick Chaudouët, Didier Chaussende, Bilal Nsouli, Yves Monteil |
| Keywords | Germanium, Hetero-Epitaxy, Single-Domain, Vapor Liquid Solid Mechanism |
| Price | US$ 28,- |
We report on the heteroepitaxial growth of 3C-SiC layers by Vapor-Liquid-Solid (VLS) mechanism on various α-SiC substrates, namely on- and off-axis for both 4H and 6H-SiC(0001), Si and C faces. The Si-Ge melts, which Si content was varied from 25 to 50 at%, were fed by 3 sccm of propane. The growth temperature was varied from 1200 to 1600°C. It was found that singledomain 3C-SiC layers can be obtained on 6H-SiC off and on-axis and 4H-SiC on-axis, while the other types of substrate gave twinned 3C-SiC material. As a general rule, one has to increase temperature when decreasing the Si content of the melt in order to avoid DPB formation. It was also found that twinned 3C-SiC layers form at low temperature while homoepitaxy is achieved at high temperature.
