Paper Title:
Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC
  Abstract

The effect of initial growth condition of 3C-SiC growth on the C-face of 6H-SiC has been studied in sublimation epitaxy. The initial temperature increase to initiate the sublimation has a strong effect on the polytype formation using on-axis substrates. Polytype inclusions of 6H-SiC in the 3C-SiC layers is found to be related to spiral growth. The micropipe dissociation process is discussed. At the slowest ramp-up of the temperature the 3C-SiC does not contain any inclusions. In 1 degree off-oriented substrates there were no 3C-SiC formation. In this case the different ramp-up conditions has an influence on the heights of the steps.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
195-198
DOI
10.4028/www.scientific.net/MSF.556-557.195
Citation
M. Syväjärvi, N. Sritirawisarn, R. Yakimova, "Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC", Materials Science Forum, Vols. 556-557, pp. 195-198, 2007
Online since
September 2007
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Price
$32.00
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