Paper Title:
Growth Induced Stacking Fault Formation in 4H-SiC
| Periodical | Materials Science Forum (Volumes 556 - 557) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2006 |
| Edited by | N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall |
| Pages | 21-24 |
| DOI | 10.4028/www.scientific.net/MSF.556-557.21 |
| Citation | D. Siche et al., 2007, Materials Science Forum, 556-557, 21 |
| Online since | September, 2007 |
| Authors | D. Siche, M. Albrecht, H. J. Rost, Andreas Sendzik |
| Keywords | 4H-SiC, Off-Orientation, Single Crystal Growth, Stacking Fault |
| Price | US$ 28,- |
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Abstract
C-plane substrates with off-orientation to <1120 > may stabilize the grown polytype, but the stacking fault density (SFD) increases from zero in the on-axis sample to 4500 cm-1 (7.7° off). The SF form preferentially at the seed-crystal-interface by a kinetically induced rearrangement of surface ad-atoms on m-facets. Most SF start in bundles with an average distance of 100 .m, which are subdivided in smaller bundles with 8 .m distance. They start preferentially from the upper corner of the vertical non-polar plane of bunched steps, which may be composed of small pyramids with m-facet surfaces. The dislocation density could decrease with increasing SFD by a pinning mechanism.
