Growth Induced Stacking Fault Formation in 4H-SiC |
| Journal |
Materials Science Forum (Volumes 556 - 557) |
| Volume |
Silicon Carbide and Related Materials 2006 |
| Edited by |
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall |
| Pages |
21-24 |
| DOI |
10.4028/www.scientific.net/MSF.556-557.21 |
| Online since |
September, 2007 |
| Authors |
D. Siche,
M. Albrecht,
H. J. Rost,
Andreas Sendzik
|
| Keywords |
4H-SiC, Off-Orientation, Single Crystal Growth, Stacking Fault |
| Abstract |
C-plane substrates with off-orientation to <1120 > may stabilize the grown polytype, but
the stacking fault density (SFD) increases from zero in the on-axis sample to 4500 cm-1 (7.7° off).
The SF form preferentially at the seed-crystal-interface by a kinetically induced rearrangement of
surface ad-atoms on m-facets. Most SF start in bundles with an average distance of 100 .m, which
are subdivided in smaller bundles with 8 .m distance. They start preferentially from the upper
corner of the vertical non-polar plane of bunched steps, which may be composed of small pyramids
with m-facet surfaces. The dislocation density could decrease with increasing SFD by a pinning
mechanism. |
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