Paper Title:
Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)
  Abstract

A set of three 4H-SiC wafers with manufacturer specified micropipe density of 0-5 cm-2 were characterized by x-ray diffraction (XRD) maps before and after final chemical-mechanical polish. After final polish, the wafers were also investigated with atomic force microscopy, radius of curvature measurements and cross-polarization (x-pol) mapping. It was found that there was largely a lack of correlation between the XRD and x-pol maps, which strongly suggests that x-pol is insensitive to crystalline imperfections to which XRD is sensitive.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
235-238
DOI
10.4028/www.scientific.net/MSF.556-557.235
Citation
D. K. Gaskill, M. A. Mastro, K. K. Lew, B. L. VanMil, R. L. Myers-Ward, R. T. Holm, C. R. Eddy, "Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)", Materials Science Forum, Vols. 556-557, pp. 235-238, 2007
Online since
September 2007
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Price
$32.00
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