Paper Title:
Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping
  Abstract

In this study, we report defect analysis in 4H-SiC crystals of high nitrogen doping grown by sublimation method, and we discuss key points for defect restraint. The growth was performed in two kinds of growth directions; c-axis and a-axis. In the c-axis grown crystal with carrier density greater than 1×10-19cm-3, defect propagation was confirmed in the vertical direction for a growth direction affected by the doping by x-ray topography. This phenomenon was not observed in the a-axis grown crystals. In sublimation growth, the quantity of impurities tends to increase as growth rate decreases. Therefore, in the c-axis growth of doped 4H-SiC bulk crystals, we have to be careful so that dopant does not increase too much without intention in grown layers with lower growth rate, for example at the beginning and end of the growth.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
239-242
DOI
10.4028/www.scientific.net/MSF.556-557.239
Citation
T. Kato, T. Miura, K. Wada, E. Hozomi, H. Taniguchi, S. I. Nishizawa, K. Arai, "Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping", Materials Science Forum, Vols. 556-557, pp. 239-242, 2007
Online since
September 2007
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Price
$32.00
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