Paper Title:
Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method
  Abstract

We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport (PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth. Grown 2”-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about 1017/cm3 was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal grown with periodically modulated hydrogen addition definitely exhibited lower carrier concentration and lower micropipe density as well as reduced growth rate.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
25-28
DOI
10.4028/www.scientific.net/MSF.556-557.25
Citation
J. G. Kim, J. H. An, J. D. Seo, J. K. Kim, M. O. Kyun, W. J. Lee, I. S. Kim, B. C. Shin, K. R. Ku, "Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method", Materials Science Forum, Vols. 556-557, pp. 25-28, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Shao Ping Wang, Edward M. Sanchez, A. Kopec, M. Zhang, O. Hernandez
51
Authors: Kazuhiko Kusunoki, S. Munetoh, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara, Kazuo Nakajima
123
Authors: Jung Kyu Kim, Kap Ryeol Ku, Dong Jin Kim, Sang Phil Kim, Won Jae Lee, Byoung Chul Shin, Geun Hyoung Lee, Il Soo Kim
Abstract:SiC crystal boules with different shapes were prepared using sublimation physical vapor transport technique (PVT) and then their crystal...
47
Authors: Shigeta Kozawa, Kazuaki Seki, Alexander, Yuji Yamamoto, Toru Ujihara, Yoshikazu Takeda
Abstract:We investigated dislocation behavior in the crystal grown on 6H-SiC (0001) by solution method using synchrotron X-ray topography and thermal...
28
Authors: Tatsuo Fujimoto, Noboru Ohtani, Shinya Sato, Masakazu Katsuno, Hiroshi Tsuge, Wataru Ohashi
Chapter 1: SiC Bulk Growth
Abstract:Sublimation-recrystallization processes occurring during PVT are investigated from the viewpoint of quasi-equilibrium phase transitions of...
21