Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method |
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| Journal | Materials Science Forum (Volumes 556 - 557) |
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| Volume | Silicon Carbide and Related Materials 2006 |
| Edited by | N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall |
| Pages | 25-28 |
| DOI | 10.4028/www.scientific.net/MSF.556-557.25 |
| Citation | Jung Gon Kim et al., 2007, Materials Science Forum, 556-557, 25 |
| Online since | September, 2007 |
| Authors | Jung Gon Kim, Joon Ho An, Jung Doo Seo, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku |
| Keywords | Crystal Boules, Crystal Quality, Hydrogen, PVT, Sublimation |
| Abstract | We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport (PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth. Grown 2”-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about 1017/cm3 was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal grown with periodically modulated hydrogen addition definitely exhibited lower carrier concentration and lower micropipe density as well as reduced growth rate. |
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