Paper Title:
Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging
  Abstract

We investigated the location of the nuclei of Shockley-type stacking faults (SSFs) in the 4H-SiC pin diodes, using electroluminescence (EL) imaging. The nuclei of SSFs were identified as three types, located (i) on the mesa edge, (ii) in the surface region, and (iii) inside the epilayer. We compared the frequency of the nuclei according to these three locations for the (0001) and (000-1) pin diodes. The number of SSFs originated from the nuclei inside the epilayer in the (000-1) pin diodes was much less (<4 cm-2) than that in the (0001) pin diodes. However, the numbers of SSF nuclei (0.3 ~ 0.8 per device) located on the mesa wall and the surface region in the (000-1) pin diodes were comparable to the (0001) pin diodes. We also investigated the process responsible for generating the SSF nuclei.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
251-254
DOI
10.4028/www.scientific.net/MSF.556-557.251
Citation
R. Ishii, T. Miyanagi, I. Kamata, H. Tsuchida, K. Nakayama, Y. Sugawara, "Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging", Materials Science Forum, Vols. 556-557, pp. 251-254, 2007
Online since
September 2007
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