Paper Title:
Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals
  Abstract

In this paper we report, based on analysis of dislocation statistics, on the influence of growth temperature on the nucleation, propagation and annihilation mechanisms of dislocations. Using KOH defect etching and optical microscopy we have conducted dislocation tracking along lengths of crystals grown under various process temperature regimes to study their evolution and propagation mechanisms statistically. We further present the influence of growth temperature on the step structure of the growth front using AFM measurements. From the analysis of dislocation statistics and step structure in relation to temperature we derive the role of surface kinetics of the SiC gas species on the growth surface in dislocation evolution during PVT growth of bulk SiC.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
263-266
DOI
10.4028/www.scientific.net/MSF.556-557.263
Citation
S. A. Sakwe, P. J. Wellmann, "Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals", Materials Science Forum, Vols. 556-557, pp. 263-266, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Y. Sumino, H. Watanabe, Naoaki Yoshida
Abstract:In order to investigate the effect of stepwise change of irradiation temperature on pure copper, heavy ion irradiations under constant...
1479
Authors: T. Kitamura, Shinichi Nakashima, Tomohisa Kato, K. Kojima, Hajime Okumura
Abstract:We characterized the 4H- and 6H-SiC bulk crystals with graded doping and epitaxial films with various carrier densities by Raman scattering...
501
Authors: W. Mao, Y. Li, W. Guo, Z. An
Abstract:The precipitation behaviors of fine MnS and other second phase particles in hot band, decarburized sheet and 875 oC annealed sheet before...
247
Authors: Gang Li, Wen Ming Cheng
Abstract:Ultra-thin (20 nm) nickel catalyst films were deposited by sputtering on SiO2/Si substrates. At the pretreatments, ammonia (NH3) was...
312
Authors: Zhan Guo Li, Ming Hui You, Guo Jun Liu, Xin Gao, Lin Li, Zhi Peng Wei, Mei Li, Yong Wang, Xiao Hua Wang, Lian He Li
Chapter 1: Multifunctional Materials
Abstract:We investigate the growth of low-density(~4×108cm-2) InAs quantum dots (QDs) on GaAs by molecular beam...
12