Paper Title:
Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
  Abstract

The advantage of room-temperature photoluminescence (PL) mapping was demonstrated for nondestructive detection of stacking faults (SFs) in off-oriented 4H-SiC epitaxial and bulk wafers. In mapping of the SF-related emission at 2.9 eV on the wafers, the SFs in the surface region appeared as a bar-shaped pattern with the long side perpendicular to the off-cut direction. The use of 266 nm light excitation is essential to detect the SF pattern in the bulk wafers because of its shallow penetration depth. The dark lines crossing the bar-shaped patterns in the epitaxial wafers are ascribable to the basal plane dislocation located close to the SF-planes.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
275-278
DOI
10.4028/www.scientific.net/MSF.556-557.275
Citation
N. Hoshino, M. Tajima, T. Hayashi, T. Nishiguchi, H. Kinoshita, H. Shiomi, "Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation", Materials Science Forum, Vols. 556-557, pp. 275-278, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Gan Feng, Jun Suda, Tsunenobu Kimoto
Abstract:The micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping have been utilized to investigate the planar defects, stacking...
245
Authors: Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Hiroshi Tsuge, Takashi Aigo, S. Satoh, Hirokatsu Yashiro, Taizo Hoshino, Hosei Hirano, Wataru Ohashi
Abstract:In-grown type stacking faults (SFs) like structures were observed in 100mm diameter 4H-SiC crystals by Photoluminescence (PL) mappings, and...
9
Authors: Patrick Berwian, Daniel Kaminzky, Katharina Roßhirt, Birgit Kallinger, Jochen Friedrich, Steffen Oppel, Adrian Schneider, Michael Schütz
Chapter 11: Advanced Methods and Tools for Investigation of Semiconductor Materials
Abstract:A new tool for characterizing extended defects in Silicon Carbide (SiC) based on photoluminescence imaging is presented. In contrast to other...
484