Paper Title:
The DI Defect is Associated with a Stacking Fault?
  Abstract

Using TEM we show that defective regions are formed in SiC by ion implantation, and that some of the regions grow at the expense of others. Using HRTEM we show that these regions contain a large number of stacking faults. It is proposed that these stacking faults are Frank intrinsic stacking faults formed by condensation of divacancies, and it is this defect that is associated with the DI defect.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
287-290
DOI
10.4028/www.scientific.net/MSF.556-557.287
Citation
K. A. Jones, T.S. Zheleva, R.D. Vispute, S. S. Hullavarad, "The DI Defect is Associated with a Stacking Fault?", Materials Science Forum, Vols. 556-557, pp. 287-290, 2007
Online since
September 2007
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Price
$32.00
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