Paper Title:
XRD and Photoluminescence Whole-Wafer Mapping of 4H-SiC Wafers
  Abstract

The commercial availability of SiC-based devices has been limited by a number of factors including wafer supply, cost, wafer size and crystal quality. Recently a number of vendors of 4H and 6H SiC wafers have emerged and 100 mm diameter wafers are commercially available. All vendors now claim to meet or exceed the existing SEMI specifications M55-0304. Both SEMI and manufacturers’ specifications focus on wafer dimensions and gross physical defects such as micropipes that are visible by optical inspection. In this paper we describe high-density XRD and PL mapping measurements on a series of nominally identical, semi-insulating 4H wafers from a range of manufacturers. We show very large variations in crystal quality, polytypism and doping/contamination within-wafer, from wafer-to-wafer and vendor-to-vendor. It is logical to assume that these variations may be responsible for observed variations in device properties and yield.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
299-302
DOI
10.4028/www.scientific.net/MSF.556-557.299
Citation
T. Ryan, J. Hennessy, C. Harrison, S. Y. Wang, G. Webster, A. Majima, "XRD and Photoluminescence Whole-Wafer Mapping of 4H-SiC Wafers", Materials Science Forum, Vols. 556-557, pp. 299-302, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Simona Binetti, Alessia Le Donne, Maurizio Acciarri, M. Cerminara, Sergio Pizzini
317
Authors: L. Masarotto, Jean Marie Bluet, I. El Harrouni, Gérard Guillot
349
Authors: James D. Oliver
Abstract:Device quality SiC wafers are extremely expensive and available from only a limited number of vendors. This has limited the ability of...
291
Authors: John Hennessy, Tom Ryan
Abstract:Micro-photoluminescence can be used to image electrically active structural defects in SiC. Under suitable excitation conditions it is...
383
Authors: Andrea Canino, Massimo Camarda, Francesco La Via
Abstract:Single Shockley faults have been studied in 4H-SiC epitaxial layers by using a spatial resolved micro-photoluminescence technique. In...
555