Paper Title:
XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution
  Abstract

We carried out the characterization of the crystallinity of the solution growth self-standing silicon carbide (SiC) crystals, which were grown from Si-C-Ti ternary solution with Accelerated Crucible Rotation Technique (ACRT). The self-standing crystal exhibited homogeneous green color without cracks and inclusions. The crystallinity of the self-standing crystal was characterized by various precise XRD diffraction measurements, such as の-scan rocking curve measurement, X-ray topography and reciprocal lattice mapping. The Full Width at Half Maximum (FWHM) of the の-scan rocking curves was about 20 arcsec. The X-ray topography showed a large area with a homogeneous orientation. The reciprocal lattice mapping exhibited a sharp single peak indicating the excellent crystallinity. Finally we confirmed rather high crystallinity of the self-standing crystals by etch pits measurement using molten KOH etching.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
303-306
DOI
10.4028/www.scientific.net/MSF.556-557.303
Citation
N. Yashiro, K. Kusunoki, K. Kamei, A. Yauchi, "XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution", Materials Science Forum, Vols. 556-557, pp. 303-306, 2007
Online since
September 2007
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$32.00
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