Paper Title:
Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers
  Abstract

Excess carrier lifetimes in 4H SiC epitaxial wafers were characterized by microwave photoconductive decay (o/PCD). The measured decay compromised of surface and bulk recombination curves have fast and slow components. Measured lifetimes are not changed with various surface passivation techniques. High resolution lifetime maps show good correlation with stress birefringence images and lower lifetime around extended material defects like grainboundaries, defect clusters, edge defects and polytype switching bands. Chlorosilane based CVD epiwafers show higher bulk lifetime values than standard silane based CVD materials due to less bulk lifetime defect density.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
323-326
DOI
10.4028/www.scientific.net/MSF.556-557.323
Citation
G. Y. Chung, M. J. Loboda, M. F. MacMillan, J. W. Wan, D. M. Hansen, "Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers", Materials Science Forum, Vols. 556-557, pp. 323-326, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jian Wei Wan, Mark J. Loboda, Mike F. MacMillan, Gil Yong Chung, E.P. Carlson, V.M. Torres
Abstract:A SiC epitaxy process based on chlorosilane/propane chemistry has been successfully transferred from a single-wafer R&D system to a...
145
Authors: G. Borionetti, S. Cox, P. Godio, I. Gohar, J. Pitney, M. Seacrist
Abstract:The need of an effective control of residual metal content inside the silicon epitaxial wafers is revamping for CCD and CMOS applications,...
467
Authors: Jie Zhang, Janice Mazzola, Swapna G. Sunkari, Gray Stewart, Paul B. Klein, Rachael M. Ward, E.R. Glaser, Kok Keong Lew, D. Kurt Gaskill, Igor Sankin, Volodymyr Bondarenko, David Null, David C. Sheridan, Michael S. Mazzola
Abstract:Epitaxial growth of 3-in, 4° off-axis 4H SiC with addition of HCl has been presented. Good surface morphology with a low defect density has...
103
Authors: Peder Bergman, I.D. Booker, Louise Lilja, Jawad Ul Hassan, Erik Janzén
Chapter 3: Physical Properties and Characterization of SiC
Abstract:In this report we present homoepitaxial growth of 4H-SiC on the Si-face of nominally on-axis substrates with diameter up to 100 mm in a...
289
Authors: Sethu Saveda Suvanam, M. Usman, K. Gulbinas, V. Grivickas, Anders Hallén
Chapter 6: Interface Characterization
Abstract:This paper aims to establish a new method to characterize the interface between 4H-SiC and passivating dielectric layers. The investigations...
465