Paper Title:
Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC
  Abstract

The dependence of donor-acceptor pair (DAP) emission properties on impurity concentrations of N and B in 6H-SiC epilayers was investigated. Doped samples were grown by closed sublimation technique, and impurity concentrations were confirmed by secondary ion mass spectrometry (SIMS). Photoluminescence (PL) measurement results indicate that p-type 6H-SiC with NA>ND had extremely low DAP emission efficiency, whereas n-type 6H-SiC with NA

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
335-338
DOI
10.4028/www.scientific.net/MSF.556-557.335
Citation
S. Murata, Y. Nakamura, T. Maeda, Y. Shibata, M. Ikuta, M. Sugiura, S. Nitta, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, M. Yoshimoto, T. Furusho, H. Kinoshita, "Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC", Materials Science Forum, Vols. 556-557, pp. 335-338, 2007
Online since
September 2007
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