Paper Title:
Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC
  Abstract

Aluminum ions (Al+) were implanted at room temperature or at 500°C into n-type 4HSiC. The implantation damage (displaced Si atoms) and the electrical activation of Al+ ions (concentration of Al acceptors) were determined by Rutherford backscattering in channeling mode and Hall effect, respectively, as a function of the annealing temperature.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
343-346
DOI
10.4028/www.scientific.net/MSF.556-557.343
Citation
M. Obernhofer, M. Krieger, F. Schmid, H. B. Weber, G. Pensl, A. Schöner, "Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC", Materials Science Forum, Vols. 556-557, pp. 343-346, 2007
Online since
September 2007
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Price
$32.00
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