Paper Title:
FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS
  Abstract

The resonant frequencies and quality factors of MEMS and NEMS depend critically on the layer quality and the residual stress in the SiC/Si heterostructure. It is demonstrated, that FTIRellipsometry is a suitable technique for monitoring the inhomogeneous residual stress inside SiC/Si heterostructures containing thin layers and their variation with during processing.

  Info
Periodical
Materials Science Forum (Volumes 556-557)
Edited by
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Pages
363-366
DOI
10.4028/www.scientific.net/MSF.556-557.363
Citation
J. Pezoldt, C. Förster, V. Cimalla, F. Will, R. Stephan, K. Brueckner, M. A. Hein, O. Ambacher, "FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS", Materials Science Forum, Vols. 556-557, pp. 363-366, 2007
Online since
September 2007
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Price
$32.00
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